PART |
Description |
Maker |
IRFR9120 IRFU9120 IRFR91209A |
5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP
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IRF540 RF1S540SM |
28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N沟道增强型功率MOS场效应管) 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
|
Intersil, Corp.
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HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
|
Fairchild Semiconductor Corporation
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HUF75645P3 HUF75645S3S HUF75645P3NL HUF75645S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 75A条(丁)|63AB 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TRANSISTOR,MOSFET 75A, 100V, 0.014 Ohm, N-Channel, UltraFETPower MOSFETs
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
STQ1NE10L STQ1NE10L-AP |
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFETPOWER MOSFET N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET POWER MOSFET N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET⑩ POWER MOSFET
|
意法半导 STMicroelectronics ST Microelectronics
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RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
|
RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs 12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
IRF9510 FN2214 |
From old datasheet system 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET 3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
STL22NF10 |
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLATLOW GATE CHARGE STripFETII MOSFET N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT LOW GATE CHARGE STripFET II MOSFET N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ II MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation] Intersil, Corp.
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